Ionic Modulation at the LaAlO <sub>3</sub> /KTaO <sub>3</sub> Interface for Extreme High‐Mobility Two‐Dimensional Electron Gas

نویسندگان

چکیده

Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides-based two-dimensional electron systems (2DESs) have been prospected as one potential intrants for modern electronics. However, despite lighter mass, mobility carriers, key requisite high-performance devices, in 5d-oxides devices remains far behind their 3d-oxides analogs. The carriers’ these oxides is significantly hampered by inevitable presence defects. Here, very high (≈22 650 cm2 V−1 s−1) 5d-2DES confined at LaAlO3/KTaO3 interface reported. mobility, which beyond values observed SrTiO3 2DESs same carrier-density range, achieved using ionic-liquid gating room temperature. authors postulate that affects oxygen vacancies efficiently reduces any disorder interface. Investigating density broad range back-gate voltage, reveal follows power-law µ ∝ n1.2, indicating quality ionic-liquid-gated consistent with postulate. Furthermore, analysis quantum oscillations confirms high-mobility electrons occupy electronic sub-bands emerging from Ta:5d orbitals KTaO3.

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ژورنال

عنوان ژورنال: Advanced Materials Interfaces

سال: 2022

ISSN: ['2196-7350']

DOI: https://doi.org/10.1002/admi.202201633